In this article the problem of modelling a switching process of Insulated Gate Bipolar\nTransistors (IGBTs) in the SPICE software is considered. The new form of the considered transistor\nmodel is presented. The model includes controlled voltage and current sources, resistors and voltage\nsources. In the model, influence of temperature on dc and dynamic characteristics of the IGBT is\ntaken into account. A detailed description of the dynamic part of this model is included in the article\nand some results of experimental verification are shown. Verification is performed for a transistor\nIRG4PC40UD by International Rectifier. The presented results of computations and measurements\nshow clearly influence of temperature on on-time and off-time, and additionally switching energy\nlosses are observed. Moreover, the results of investigations performed with the use of the new model\nare compared to the results of computations performed with classical models of the considered device\ngiven in the literature. It is proved that the new model makes it possible to obtain a better match to\nthe results of measurements than the considered models described in the literature.
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